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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
DESCRIPTION With TO-220C package Complement to type 2SD1133/1134 APPLICATIONS Low frequency power amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO PARAMETER Collector-base voltage 2SB857 VCEO Collector-emitter voltage 2SB858 VEBO IC ICP PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -60 -5 -4 -8 40 150 -45~150 ae ae V A A W CONDITIONS Open emitter VALUE -70 -50 V UNIT V
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SB857 IC=-50mA; RBE= 2SB858 V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency IC=-10|I IE=-10|I A; IE=0 A; IC=0 CONDITIONS
2SB857 2SB858
SYMBOL
MIN -50
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V -60 -70 -5 -1.0 -1.0 -1 60 35 15 MHz 320 |I V V V V A
IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-50V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V
hFE-1 classifications B 60-120 C 100-200 D 160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB857 2SB858
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
4


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